Prediction Model for Random Variation in FinFET Induced by Line-Edge-Roughness (LER)
As the physical size of MOSFET has been aggressively scaled-down, the impact of process-induced random variation (RV) should be considered as one of the device design considerations of MOSFET. In this work, an artificial neural network (ANN) model is developed to investigate the effect of line-edge...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-02-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/10/4/455 |