Dark Current Reduction and Performance Improvements in Graphene/Silicon Heterojunction Photodetectors Obtained Using a Non-Stoichiometric HfO<sub>x</sub> Thin Oxide Layer

Dark Current Reduction and Performance Improvements in Graphene/Silicon Heterojunction Photodetectors Obtained Using a Non-Stoichiometric HfO<sub>x</sub> Thin Oxide Layer

Graphene/silicon heterojunction photodetectors suffer from a high dark current due to the high surface states and low barrier height at the interface, which limits their application. In this study, we introduce an HfO<sub>x</sub> interfacial layer via magnetron sputtering to address this...

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Bibliographic Details
Main Authors: Tao Qu, Jibin Fan, Xing Wei
Format: Article
Language:English
Published: MDPI AG 2024-02-01
Series:Nanomaterials
Subjects:
magnetron sputtering
hafnium oxide
graphene photodetector
interfacial layer
Online Access:https://www.mdpi.com/2079-4991/14/5/419

Internet

https://www.mdpi.com/2079-4991/14/5/419

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