Doping-less tunnel field-effect transistors by compact Si drain frame/Si0.6Ge0.4-channel/Ge source
Tunnel field-effect transistors (TFETs) have attracted immense interest as a promising alternative to complementary metal–oxide semiconductors for low-power-consumption applications. However, conventional TFETs introduce both random dopant fluctuations and ambipolar current issues at negative gate v...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0035370 |