Formation of cross-cutting structures with different porosity on thick silicon wafers
Three-layered pass-through structures of two types have been obtained on 500 μm thick single crystal silicon wafers by electrochemical etching in a 48% solution of hydrofluoric acid without using additional single crystal layer removal operations. The first type of the pass-through structures compri...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Pensoft Publishers
2017-06-01
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| Series: | Modern Electronic Materials |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2452177917300592 |