Magnetic bipolar transistor based on ZnO/NiO/Si heterostructure using pulsed laser deposition
Oxide semiconductors are promising candidates for next generation electronics. In this work, magnetic bipolar transistor was fabricated by growing thin films of p-NiO and n-ZnO on n-type silicon wafer by pulsed laser deposition technique with an in-situ annealing at 670° C in the presence of oxygen....
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5130046 |