Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices

Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices

This article provides a comprehensive review of wide and ultrawide bandgap power electronic semiconductor devices, comparing silicon (Si), silicon carbide (SiC), gallium nitride (GaN), and the emerging device diamond technology. Key parameters examined include bandgap, critical electric field, elect...

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Bibliographic Details
Main Authors: S M Sajjad Hossain Rafin, Roni Ahmed, Md. Asadul Haque, Md. Kamal Hossain, Md. Asikul Haque, Osama A. Mohammed
Format: Article
Language:English
Published: MDPI AG 2023-10-01
Series:Micromachines
Subjects:
wide bandgap devices
ultrawide bandgap devices
silicon
silicon carbide
GaN
diamond
Online Access:https://www.mdpi.com/2072-666X/14/11/2045

Internet

https://www.mdpi.com/2072-666X/14/11/2045

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