A Novel Low On–State Resistance Si/4H–SiC Heterojunction VDMOS with Electron Tunneling Layer Based on a Discussion of the Hetero–Transfer Mechanism

A Novel Low On–State Resistance Si/4H–SiC Heterojunction VDMOS with Electron Tunneling Layer Based on a Discussion of the Hetero–Transfer Mechanism

In this study, we propose a novel silicon (Si)/silicon carbide (4H–SiC) heterojunction vertical double–diffused MOSFET with an electron tunneling layer (ETL) (HT–VDMOS), which improves the specific on–state resistance (R<sub>ON</sub>), and examine the hetero–transfer mechanism by simulat...

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Bibliographic Details
Main Authors: Hang Chen, Yourun Zhang, Rong Zhou, Zhi Wang, Chao Lu, Zehong Li, Bo Zhang
Format: Article
Language:English
Published: MDPI AG 2023-05-01
Series:Crystals
Subjects:
silicon carbide (4H–SiC)
heterojunction
vertical double–diffused MOSFET (VDMOS)
on–state resistance
Online Access:https://www.mdpi.com/2073-4352/13/5/778

Internet

https://www.mdpi.com/2073-4352/13/5/778

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