Atomic-scale effects behind structural instabilities in Si lamellae during ion beam thinning
The rise of nanotechnology has created an ever-increasing need to probe structures on the atomic scale, to which transmission electron microscopy has largely been the answer. Currently, the only way to efficiently thin arbitrary bulk samples into thin lamellae in preparation for this technique is to...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2012-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.3698411 |