2T1C DRAM based on semiconducting MoS<sub>2</sub> and semimetallic graphene for in-memory computing

2T1C DRAM based on semiconducting MoS<sub>2</sub> and semimetallic graphene for in-memory computing

<p indent="0mm">In-memory computing is an alternative method to effectively accelerate the massive data-computing tasks of artificial intelligence (AI) and break the memory wall. In this work, we propose a 2T1C DRAM structure for in-memory computing. It integrates a monolayer graphen...

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Bibliographic Details
Main Authors: Gou Saifei, Wang Yin, Dong Xiangqi, Xu Zihan, Wang Xinyu, Sun Qicheng, Xie Yufeng, Zhou Peng, Bao Wenzhong
Format: Article
Language:English
Published: Science Press 2023-06-01
Series:National Science Open
Subjects:
molybdenum disulfide (MoS<sub>2</sub>)
graphene
DRAM
in-memory computing
Online Access:https://www.sciengine.com/doi/10.1360/nso/20220071

Internet

https://www.sciengine.com/doi/10.1360/nso/20220071

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