Strong Nonlinear Capacitive Behavior of a GaN/AlN Varactor Based on Dual-Schottky Junctions With a Cutoff Frequency of 1.5 THz

Strong Nonlinear Capacitive Behavior of a GaN/AlN Varactor Based on Dual-Schottky Junctions With a Cutoff Frequency of 1.5 THz

In this work, a novel GaN/AlN dual-Schottky junction varactor based on the recess electrode structure of a metal-2DEG-metal contact is prepared, and the capacitance and series resistance are significantly reduced due to the removal of the barrier between the metal and 2DEG. Moreover, the devices sho...

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Detaylı Bibliyografya
Asıl Yazarlar: Yuhuan Jiang, Tao Guo, Kai Wang, Jielong Liu, Chengcheng Li, Qi He, Qichao Ding, Chang Wu
Materyal Türü: Makale
Dil:English
Baskı/Yayın Bilgisi: IEEE 2024-01-01
Seri Bilgileri:IEEE Access
Konular:
GaN Schottky diode
THz
dual-Schottky junctions
neural network model
long short-term memory (LSTM)
Online Erişim:https://ieeexplore.ieee.org/document/10798425/

Internet

https://ieeexplore.ieee.org/document/10798425/

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