Heavy arsenic doping of silicon grown by atmospheric pressure selective epitaxial chemical vapor deposition
Selective epitaxial Si with a high arsenic concentration of 2.2×1019 atoms/cm3 was deposited at a high growth rate of 3.3 nm/min under atmospheric pressure. It was confirmed that this method had excellent selectivity and produced films having good crystalline quality, abrupt dopant profiles at the i...
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| Format: | Article |
| Language: | English |
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Taylor & Francis Group
2007-01-01
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| Series: | Science and Technology of Advanced Materials |
| Online Access: | http://www.iop.org/EJ/abstract/1468-6996/8/3/A03 |