Heavy arsenic doping of silicon grown by atmospheric pressure selective epitaxial chemical vapor deposition
Selective epitaxial Si with a high arsenic concentration of 2.2×1019 atoms/cm3 was deposited at a high growth rate of 3.3 nm/min under atmospheric pressure. It was confirmed that this method had excellent selectivity and produced films having good crystalline quality, abrupt dopant profiles at the i...
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| Format: | Article |
| Language: | English |
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Taylor & Francis Group
2007-01-01
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| Series: | Science and Technology of Advanced Materials |
| Online Access: | http://www.iop.org/EJ/abstract/1468-6996/8/3/A03 |
| Summary: | Selective epitaxial Si with a high arsenic concentration of 2.2×1019 atoms/cm3 was deposited at a high growth rate of 3.3 nm/min under atmospheric pressure. It was confirmed that this method had excellent selectivity and produced films having good crystalline quality, abrupt dopant profiles at the interfaces, and smooth surfaces. The growth mechanism is discussed in terms of the relationship between the effects of arsenic surface segregation and etching by hydrogen chloride. |
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| ISSN: | 1468-6996 1878-5514 |