Fabrication of advanced thin film for high performance display by nanoimprinting process via gallium oxide solution doped tin

Line pattern replication process through nanoimprint lithography (NIL) method has been used in numerous of research fields. NIL technology is not yet utilized for displays industry, and we propose an alignment layer of the sol-gel process using NIL. One-dimensionally nanopatterned by polydimethylsil...

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Main Authors: Jin Young Oh, Dong Hyun Kim, Da-Bin Yang, Bo-Kyeong Choi, Dong Wook Lee, Hong-Gyu Park, Dae-Shik Seo
Format: Article
Language:English
Published: Elsevier 2024-05-01
Series:Journal of Materials Research and Technology
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2238785424006628
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author Jin Young Oh
Dong Hyun Kim
Da-Bin Yang
Bo-Kyeong Choi
Dong Wook Lee
Hong-Gyu Park
Dae-Shik Seo
author_facet Jin Young Oh
Dong Hyun Kim
Da-Bin Yang
Bo-Kyeong Choi
Dong Wook Lee
Hong-Gyu Park
Dae-Shik Seo
author_sort Jin Young Oh
collection DOAJ
description Line pattern replication process through nanoimprint lithography (NIL) method has been used in numerous of research fields. NIL technology is not yet utilized for displays industry, and we propose an alignment layer of the sol-gel process using NIL. One-dimensionally nanopatterned by polydimethylsiloxane sheets cause surface changes in hybrid SnGaO thin films mixed in a 3:7 ratio, which aligns the liquid crystals (LCs) uniformly in the line pattern direction. These surface changes are confirmed through atomic force microscopy data analysis, and changes in surface shapes for different the curing temperatures in the furnace are analyzed. X-ray photoelectron spectroscopy shows that the chemical composition of the thin films changes according to curing temperatures, and the intensities of SnO and GaO increase exponentially at 200 °C compared to those at 50 °C. Through this, the van der Waals force increases between surface molecules, in the anisotropic direction to help align the LCs. Furthermore, we performed polarized optical microscopy and pre-tilt angle analysis confirm that the LCs are energized uniformly. Finally, the performance of an actual display device transmittance and electro-optical properties; the transmittance of SnGaO is 4.51p% higher than that of the currently commercialized PI-rubbing, and the voltage-transmittance curve is a perfect graph.
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spelling doaj.art-cbc748f1b1be47e5be79786682529a9b2024-06-20T06:52:42ZengElsevierJournal of Materials Research and Technology2238-78542024-05-0130685694Fabrication of advanced thin film for high performance display by nanoimprinting process via gallium oxide solution doped tinJin Young Oh0Dong Hyun Kim1Da-Bin Yang2Bo-Kyeong Choi3Dong Wook Lee4Hong-Gyu Park5Dae-Shik Seo6IT Nano Electronic Device Laboratory, Department of Electrical and Electronic Engineering, Yonsei University, 134 Shinchon-Dong, Seodaemun-gu, Seoul, 120-749, Republic of KoreaIT Nano Electronic Device Laboratory, Department of Electrical and Electronic Engineering, Yonsei University, 134 Shinchon-Dong, Seodaemun-gu, Seoul, 120-749, Republic of KoreaIT Nano Electronic Device Laboratory, Department of Electrical and Electronic Engineering, Yonsei University, 134 Shinchon-Dong, Seodaemun-gu, Seoul, 120-749, Republic of KoreaIT Nano Electronic Device Laboratory, Department of Electrical and Electronic Engineering, Yonsei University, 134 Shinchon-Dong, Seodaemun-gu, Seoul, 120-749, Republic of KoreaDepartment of Electrical and Electronic Engineering, Jeonju University, 303 Cheonjam-ro, Wansan-gu, Jeonju-si, Jeollabuk-do, 55069, Republic of KoreaDepartment of Smart Manufacturing Engineering, Changwon National University, 20-1 ChangwonDaehakro, Uichang-gu, Changwon-si, Republic of Korea; Department of Electrical, Electronic, Control Engineering, Changwon National University, 20-1 Changwondaehak-ro, Uichang-gu, Changwon-si, Republic of Korea; Corresponding author. Department of Smart Manufacturing Engineering, Changwon National University, 20-1 ChangwonDaehakro, Uichang-gu, Changwon-si, Republic of Korea.IT Nano Electronic Device Laboratory, Department of Electrical and Electronic Engineering, Yonsei University, 134 Shinchon-Dong, Seodaemun-gu, Seoul, 120-749, Republic of Korea; Corresponding author.Line pattern replication process through nanoimprint lithography (NIL) method has been used in numerous of research fields. NIL technology is not yet utilized for displays industry, and we propose an alignment layer of the sol-gel process using NIL. One-dimensionally nanopatterned by polydimethylsiloxane sheets cause surface changes in hybrid SnGaO thin films mixed in a 3:7 ratio, which aligns the liquid crystals (LCs) uniformly in the line pattern direction. These surface changes are confirmed through atomic force microscopy data analysis, and changes in surface shapes for different the curing temperatures in the furnace are analyzed. X-ray photoelectron spectroscopy shows that the chemical composition of the thin films changes according to curing temperatures, and the intensities of SnO and GaO increase exponentially at 200 °C compared to those at 50 °C. Through this, the van der Waals force increases between surface molecules, in the anisotropic direction to help align the LCs. Furthermore, we performed polarized optical microscopy and pre-tilt angle analysis confirm that the LCs are energized uniformly. Finally, the performance of an actual display device transmittance and electro-optical properties; the transmittance of SnGaO is 4.51p% higher than that of the currently commercialized PI-rubbing, and the voltage-transmittance curve is a perfect graph.http://www.sciencedirect.com/science/article/pii/S2238785424006628Nanoimprint lithographyGallium oxideTin oxideSol gel processLiquid crystal display
spellingShingle Jin Young Oh
Dong Hyun Kim
Da-Bin Yang
Bo-Kyeong Choi
Dong Wook Lee
Hong-Gyu Park
Dae-Shik Seo
Fabrication of advanced thin film for high performance display by nanoimprinting process via gallium oxide solution doped tin
Journal of Materials Research and Technology
Nanoimprint lithography
Gallium oxide
Tin oxide
Sol gel process
Liquid crystal display
title Fabrication of advanced thin film for high performance display by nanoimprinting process via gallium oxide solution doped tin
title_full Fabrication of advanced thin film for high performance display by nanoimprinting process via gallium oxide solution doped tin
title_fullStr Fabrication of advanced thin film for high performance display by nanoimprinting process via gallium oxide solution doped tin
title_full_unstemmed Fabrication of advanced thin film for high performance display by nanoimprinting process via gallium oxide solution doped tin
title_short Fabrication of advanced thin film for high performance display by nanoimprinting process via gallium oxide solution doped tin
title_sort fabrication of advanced thin film for high performance display by nanoimprinting process via gallium oxide solution doped tin
topic Nanoimprint lithography
Gallium oxide
Tin oxide
Sol gel process
Liquid crystal display
url http://www.sciencedirect.com/science/article/pii/S2238785424006628
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