Fabrication of advanced thin film for high performance display by nanoimprinting process via gallium oxide solution doped tin
Line pattern replication process through nanoimprint lithography (NIL) method has been used in numerous of research fields. NIL technology is not yet utilized for displays industry, and we propose an alignment layer of the sol-gel process using NIL. One-dimensionally nanopatterned by polydimethylsil...
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Elsevier
2024-05-01
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Online Access: | http://www.sciencedirect.com/science/article/pii/S2238785424006628 |
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author | Jin Young Oh Dong Hyun Kim Da-Bin Yang Bo-Kyeong Choi Dong Wook Lee Hong-Gyu Park Dae-Shik Seo |
author_facet | Jin Young Oh Dong Hyun Kim Da-Bin Yang Bo-Kyeong Choi Dong Wook Lee Hong-Gyu Park Dae-Shik Seo |
author_sort | Jin Young Oh |
collection | DOAJ |
description | Line pattern replication process through nanoimprint lithography (NIL) method has been used in numerous of research fields. NIL technology is not yet utilized for displays industry, and we propose an alignment layer of the sol-gel process using NIL. One-dimensionally nanopatterned by polydimethylsiloxane sheets cause surface changes in hybrid SnGaO thin films mixed in a 3:7 ratio, which aligns the liquid crystals (LCs) uniformly in the line pattern direction. These surface changes are confirmed through atomic force microscopy data analysis, and changes in surface shapes for different the curing temperatures in the furnace are analyzed. X-ray photoelectron spectroscopy shows that the chemical composition of the thin films changes according to curing temperatures, and the intensities of SnO and GaO increase exponentially at 200 °C compared to those at 50 °C. Through this, the van der Waals force increases between surface molecules, in the anisotropic direction to help align the LCs. Furthermore, we performed polarized optical microscopy and pre-tilt angle analysis confirm that the LCs are energized uniformly. Finally, the performance of an actual display device transmittance and electro-optical properties; the transmittance of SnGaO is 4.51p% higher than that of the currently commercialized PI-rubbing, and the voltage-transmittance curve is a perfect graph. |
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institution | Directory Open Access Journal |
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language | English |
last_indexed | 2025-03-21T15:07:16Z |
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spelling | doaj.art-cbc748f1b1be47e5be79786682529a9b2024-06-20T06:52:42ZengElsevierJournal of Materials Research and Technology2238-78542024-05-0130685694Fabrication of advanced thin film for high performance display by nanoimprinting process via gallium oxide solution doped tinJin Young Oh0Dong Hyun Kim1Da-Bin Yang2Bo-Kyeong Choi3Dong Wook Lee4Hong-Gyu Park5Dae-Shik Seo6IT Nano Electronic Device Laboratory, Department of Electrical and Electronic Engineering, Yonsei University, 134 Shinchon-Dong, Seodaemun-gu, Seoul, 120-749, Republic of KoreaIT Nano Electronic Device Laboratory, Department of Electrical and Electronic Engineering, Yonsei University, 134 Shinchon-Dong, Seodaemun-gu, Seoul, 120-749, Republic of KoreaIT Nano Electronic Device Laboratory, Department of Electrical and Electronic Engineering, Yonsei University, 134 Shinchon-Dong, Seodaemun-gu, Seoul, 120-749, Republic of KoreaIT Nano Electronic Device Laboratory, Department of Electrical and Electronic Engineering, Yonsei University, 134 Shinchon-Dong, Seodaemun-gu, Seoul, 120-749, Republic of KoreaDepartment of Electrical and Electronic Engineering, Jeonju University, 303 Cheonjam-ro, Wansan-gu, Jeonju-si, Jeollabuk-do, 55069, Republic of KoreaDepartment of Smart Manufacturing Engineering, Changwon National University, 20-1 ChangwonDaehakro, Uichang-gu, Changwon-si, Republic of Korea; Department of Electrical, Electronic, Control Engineering, Changwon National University, 20-1 Changwondaehak-ro, Uichang-gu, Changwon-si, Republic of Korea; Corresponding author. Department of Smart Manufacturing Engineering, Changwon National University, 20-1 ChangwonDaehakro, Uichang-gu, Changwon-si, Republic of Korea.IT Nano Electronic Device Laboratory, Department of Electrical and Electronic Engineering, Yonsei University, 134 Shinchon-Dong, Seodaemun-gu, Seoul, 120-749, Republic of Korea; Corresponding author.Line pattern replication process through nanoimprint lithography (NIL) method has been used in numerous of research fields. NIL technology is not yet utilized for displays industry, and we propose an alignment layer of the sol-gel process using NIL. One-dimensionally nanopatterned by polydimethylsiloxane sheets cause surface changes in hybrid SnGaO thin films mixed in a 3:7 ratio, which aligns the liquid crystals (LCs) uniformly in the line pattern direction. These surface changes are confirmed through atomic force microscopy data analysis, and changes in surface shapes for different the curing temperatures in the furnace are analyzed. X-ray photoelectron spectroscopy shows that the chemical composition of the thin films changes according to curing temperatures, and the intensities of SnO and GaO increase exponentially at 200 °C compared to those at 50 °C. Through this, the van der Waals force increases between surface molecules, in the anisotropic direction to help align the LCs. Furthermore, we performed polarized optical microscopy and pre-tilt angle analysis confirm that the LCs are energized uniformly. Finally, the performance of an actual display device transmittance and electro-optical properties; the transmittance of SnGaO is 4.51p% higher than that of the currently commercialized PI-rubbing, and the voltage-transmittance curve is a perfect graph.http://www.sciencedirect.com/science/article/pii/S2238785424006628Nanoimprint lithographyGallium oxideTin oxideSol gel processLiquid crystal display |
spellingShingle | Jin Young Oh Dong Hyun Kim Da-Bin Yang Bo-Kyeong Choi Dong Wook Lee Hong-Gyu Park Dae-Shik Seo Fabrication of advanced thin film for high performance display by nanoimprinting process via gallium oxide solution doped tin Journal of Materials Research and Technology Nanoimprint lithography Gallium oxide Tin oxide Sol gel process Liquid crystal display |
title | Fabrication of advanced thin film for high performance display by nanoimprinting process via gallium oxide solution doped tin |
title_full | Fabrication of advanced thin film for high performance display by nanoimprinting process via gallium oxide solution doped tin |
title_fullStr | Fabrication of advanced thin film for high performance display by nanoimprinting process via gallium oxide solution doped tin |
title_full_unstemmed | Fabrication of advanced thin film for high performance display by nanoimprinting process via gallium oxide solution doped tin |
title_short | Fabrication of advanced thin film for high performance display by nanoimprinting process via gallium oxide solution doped tin |
title_sort | fabrication of advanced thin film for high performance display by nanoimprinting process via gallium oxide solution doped tin |
topic | Nanoimprint lithography Gallium oxide Tin oxide Sol gel process Liquid crystal display |
url | http://www.sciencedirect.com/science/article/pii/S2238785424006628 |
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