Demonstration of Vertical GaN Schottky Barrier Diode With Robust Electrothermal Ruggedness and Fast Switching Capability by Eutectic Bonding and Laser Lift-Off Techniques

Demonstration of Vertical GaN Schottky Barrier Diode With Robust Electrothermal Ruggedness and Fast Switching Capability by Eutectic Bonding and Laser Lift-Off Techniques

In this letter, we have successfully transferred the 4-inch crack-free GaN films from sapphire substrate to conductive silicon wafer by employing eutectic bonding and laser lift-off (LLO) techniques. The resultant 1-mm2 fully-vertical GaN Schottky barrier diodes (SBDs) exhibit a high current swing o...

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Bibliographic Details
Main Authors: Qi Wei, Feng Zhou, Weizong Xu, Fangfang Ren, Dong Zhou, Dunjun Chen, Rong Zhang, Youdou Zheng, Hai Lu
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
GaN
Schottky barrier diode
laser lift-off
electrothermal ruggedness
fast switching capability
Online Access:https://ieeexplore.ieee.org/document/9951136/

Internet

https://ieeexplore.ieee.org/document/9951136/

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