Effect of Thermal Annealing on the Photoluminescence of Dense Si Nanodots Embedded in Amorphous Silicon Nitride Films

Effect of Thermal Annealing on the Photoluminescence of Dense Si Nanodots Embedded in Amorphous Silicon Nitride Films

Luminescent amorphous silicon nitride-containing dense Si nanodots were prepared by using very-high-frequency plasma-enhanced chemical vapor deposition at 250 °C. The influence of thermal annealing on photoluminescence (PL) was studied. Compared with the pristine film, thermal annealing at 1000 °C g...

Full description

Bibliographic Details
Main Authors: Qianqian Liu, Xiaoxuan Chen, Hongliang Li, Yanqing Guo, Jie Song, Wenxing Zhang, Chao Song, Rui Huang, Zewen Lin
Format: Article
Language:English
Published: MDPI AG 2021-03-01
Series:Micromachines
Subjects:
photoluminescence
thin films
optical properties
SiNx
Online Access:https://www.mdpi.com/2072-666X/12/4/354

Internet

https://www.mdpi.com/2072-666X/12/4/354

Similar Items