A 100 MHz 0.41 fJ/(Bit∙Search) 28 nm CMOS-Bulk Content Addressable Memory for HEP Experiments

A 100 MHz 0.41 fJ/(Bit∙Search) 28 nm CMOS-Bulk Content Addressable Memory for HEP Experiments

This paper presents a transistor-level design with extensive experimental validation of a Content Addressable Memory (CAM), based on an eXclusive OR (XOR) single-bit cell. This design exploits a dedicated architecture and a fully custom approach (both in the schematic and the layout phase), in order...

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Bibliographic Details
Main Authors: Federico Fary, Andrea Baschirotto
Format: Article
Language:English
Published: MDPI AG 2020-10-01
Series:Journal of Low Power Electronics and Applications
Subjects:
associative memory
content addressable memory
digital integrated circuits
CMOS technology
low-power electronics
Online Access:https://www.mdpi.com/2079-9268/10/4/35

Internet

https://www.mdpi.com/2079-9268/10/4/35

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