Characterization and optimization of gate driver turn-off voltage for eGaN HEMTs in a phase-leg configuration
Affected by high switching speed and parasitic parameters, crosstalk problem of eGaN HEMT in a phase-leg configuration cannot be ignored. By decreasing gate driver turn-off voltage, the false turn-on phenomenon of device caused by crosstalk can be avoided, but it is hard to realize the minimization...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2022-04-01
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| Series: | Energy Reports |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2352484721012373 |