Critical Assessment of the High Carrier Mobility of Bilayer In2O3/IGZO Transistors and the Underlying Mechanisms

Critical Assessment of the High Carrier Mobility of Bilayer In2O3/IGZO Transistors and the Underlying Mechanisms

Abstract High‐performance bilayer In2O3/IGZO thin‐film transistors (TFTs) fabricated by pulsed laser deposition are reported. The TFTs exhibit an on/off current ratio of 109, a reversed subthreshold slope (ss) of 0.08 V dec−1, and a high saturation mobility of 47.9 cm2 V−1 s−1. The reliability of th...

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Bibliographic Details
Main Authors: Min Guo, Hai Ou, Dongyu Xie, Qiaoji Zhu, Mengye Wang, Lingyan Liang, Fengjuan Liu, Ce Ning, Hongtao Cao, Guangcai Yuan, Xubing Lu, Chuan Liu
Format: Article
Language:English
Published: Wiley-VCH 2023-03-01
Series:Advanced Electronic Materials
Subjects:
high mobility
oxide semiconductors
thin‐film transistors
two‐dimensional electron gas
Online Access:https://doi.org/10.1002/aelm.202201184

Internet

https://doi.org/10.1002/aelm.202201184

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