Tuning of SnS Thin Film Conductivity on Annealing in an Open Air Environment for Transistor Application

The study aimed at enhancement and optimisation of SnS conductivity via annealing for field effect transistor’s semiconductor channel layer application. Interstitials and vacancies in SnS films are known to cause carrier traps which limit charge carriers and hence limit the achievement of the thresh...

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Bibliographic Details
Main Authors: Thomas Daniel, Uno Uno, Kasim Isah, Umaru Ahmadu
Format: Article
Language:English
Published: V.N. Karazin Kharkiv National University Publishing 2020-04-01
Series:East European Journal of Physics
Subjects:
Online Access:https://periodicals.karazin.ua/eejp/article/view/15541