Modulation Doping of Silicon Nanowires to Tune the Contact Properties of Nano‐Scale Schottky Barriers

Modulation Doping of Silicon Nanowires to Tune the Contact Properties of Nano‐Scale Schottky Barriers

Abstract Doping silicon on the nanoscale by the intentional introduction of impurities into the intrinsic semiconductor suffers from effects such as dopant deactivation, random dopant fluctuations, out‐diffusion, and mobility degradation. This paper presents the first experimental proof that doping...

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Bibliographic Details
Main Authors: Soundarya Nagarajan, Daniel Hiller, Ingmar Ratschinski, Dirk König, Sean C. Smith, Thomas Mikolajick, Jens Trommer
Format: Article
Language:English
Published: Wiley-VCH 2024-01-01
Series:Advanced Materials Interfaces
Subjects:
contact resistance
modulation doping
nickel silicide
Schottky barrier height
silicon nanowires
transfer length method
Online Access:https://doi.org/10.1002/admi.202300600

Internet

https://doi.org/10.1002/admi.202300600

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