Scaled-Down c-Si and c-SiGe Wagon-Wheels for the Visualization of the Anisotropy and Selectivity of Wet-Chemical Etchants
Abstract Wet etching offers an advantage as a soft, damage-less method to remove sacrificial material with close to nanometer precision which has become critical for the fabrication of nanoscale structures. In order to develop such wet etching solutions, screening of etchant properties like selectiv...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2019-08-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-019-3114-8 |