Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf<sub>1−x</sub>Zr<sub>x</sub>O<sub>2</sub> Diodes

Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf<sub>1−x</sub>Zr<sub>x</sub>O<sub>2</sub> Diodes

Ferroelectric (FE) Hf<sub>1−x</sub>Zr<sub>x</sub>O<sub>2</sub> is a potential candidate for emerging memory in artificial intelligence (AI) and neuromorphic computation due to its non-volatility for data storage with natural bi-stable characteristics. This study e...

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Bibliographic Details
Main Authors: Kuo-Yu Hsiang, Chun-Yu Liao, Jer-Fu Wang, Zhao-Feng Lou, Chen-Ying Lin, Shih-Hung Chiang, Chee-Wee Liu, Tuo-Hung Hou, Min-Hung Lee
Format: Article
Language:English
Published: MDPI AG 2021-10-01
Series:Nanomaterials
Subjects:
ferroelectric
antiferroelectric
HfZrO<sub>2</sub>
Online Access:https://www.mdpi.com/2079-4991/11/10/2685

Internet

https://www.mdpi.com/2079-4991/11/10/2685

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