Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf<sub>1−x</sub>Zr<sub>x</sub>O<sub>2</sub> Diodes
Ferroelectric (FE) Hf<sub>1−x</sub>Zr<sub>x</sub>O<sub>2</sub> is a potential candidate for emerging memory in artificial intelligence (AI) and neuromorphic computation due to its non-volatility for data storage with natural bi-stable characteristics. This study e...
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MDPI AG
2021-10-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/11/10/2685 |
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| author | Kuo-Yu Hsiang Chun-Yu Liao Jer-Fu Wang Zhao-Feng Lou Chen-Ying Lin Shih-Hung Chiang Chee-Wee Liu Tuo-Hung Hou Min-Hung Lee |
| author_facet | Kuo-Yu Hsiang Chun-Yu Liao Jer-Fu Wang Zhao-Feng Lou Chen-Ying Lin Shih-Hung Chiang Chee-Wee Liu Tuo-Hung Hou Min-Hung Lee |
| author_sort | Kuo-Yu Hsiang |
| collection | DOAJ |
| description | Ferroelectric (FE) Hf<sub>1−x</sub>Zr<sub>x</sub>O<sub>2</sub> is a potential candidate for emerging memory in artificial intelligence (AI) and neuromorphic computation due to its non-volatility for data storage with natural bi-stable characteristics. This study experimentally characterizes and demonstrates the FE and antiferroelectric (AFE) material properties, which are modulated from doped Zr incorporated in the HfO<sub>2</sub>-system, with a diode-junction current for memory operations. Unipolar operations on one of the two hysteretic polarization branch loops of the mixed FE and AFE material give a low program voltage of 3 V with an ON/OFF ratio >100. This also benefits the switching endurance, which reaches >10<sup>9</sup> cycles. A model based on the polarization switching and tunneling mechanisms is revealed in the (A)FE diode to explain the bipolar and unipolar sweeps. In addition, the proposed FE-AFE diode with Hf<sub>1−x</sub>Zr<sub>x</sub>O<sub>2</sub> has a superior cycling endurance and lower stimulation voltage compared to perovskite FE-diodes due to its scaling capability for resistive FE memory devices. |
| first_indexed | 2024-03-10T06:19:33Z |
| format | Article |
| id | doaj.art-ccef8456fbe84e73bef5131d971fd45a |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T06:19:33Z |
| publishDate | 2021-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-ccef8456fbe84e73bef5131d971fd45a2023-11-22T19:25:06ZengMDPI AGNanomaterials2079-49912021-10-011110268510.3390/nano11102685Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf<sub>1−x</sub>Zr<sub>x</sub>O<sub>2</sub> DiodesKuo-Yu Hsiang0Chun-Yu Liao1Jer-Fu Wang2Zhao-Feng Lou3Chen-Ying Lin4Shih-Hung Chiang5Chee-Wee Liu6Tuo-Hung Hou7Min-Hung Lee8Institute and Undergraduate Program of Electro-Optical Engineering, National Taiwan Normal University, Taipei 11677, TaiwanInstitute and Undergraduate Program of Electro-Optical Engineering, National Taiwan Normal University, Taipei 11677, TaiwanGraduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, TaiwanInstitute and Undergraduate Program of Electro-Optical Engineering, National Taiwan Normal University, Taipei 11677, TaiwanInstitute and Undergraduate Program of Electro-Optical Engineering, National Taiwan Normal University, Taipei 11677, TaiwanInstitute and Undergraduate Program of Electro-Optical Engineering, National Taiwan Normal University, Taipei 11677, TaiwanGraduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, TaiwanDepartment of Electronics Engineering and Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300, TaiwanInstitute and Undergraduate Program of Electro-Optical Engineering, National Taiwan Normal University, Taipei 11677, TaiwanFerroelectric (FE) Hf<sub>1−x</sub>Zr<sub>x</sub>O<sub>2</sub> is a potential candidate for emerging memory in artificial intelligence (AI) and neuromorphic computation due to its non-volatility for data storage with natural bi-stable characteristics. This study experimentally characterizes and demonstrates the FE and antiferroelectric (AFE) material properties, which are modulated from doped Zr incorporated in the HfO<sub>2</sub>-system, with a diode-junction current for memory operations. Unipolar operations on one of the two hysteretic polarization branch loops of the mixed FE and AFE material give a low program voltage of 3 V with an ON/OFF ratio >100. This also benefits the switching endurance, which reaches >10<sup>9</sup> cycles. A model based on the polarization switching and tunneling mechanisms is revealed in the (A)FE diode to explain the bipolar and unipolar sweeps. In addition, the proposed FE-AFE diode with Hf<sub>1−x</sub>Zr<sub>x</sub>O<sub>2</sub> has a superior cycling endurance and lower stimulation voltage compared to perovskite FE-diodes due to its scaling capability for resistive FE memory devices.https://www.mdpi.com/2079-4991/11/10/2685ferroelectricantiferroelectricHfZrO<sub>2</sub> |
| spellingShingle | Kuo-Yu Hsiang Chun-Yu Liao Jer-Fu Wang Zhao-Feng Lou Chen-Ying Lin Shih-Hung Chiang Chee-Wee Liu Tuo-Hung Hou Min-Hung Lee Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf<sub>1−x</sub>Zr<sub>x</sub>O<sub>2</sub> Diodes Nanomaterials ferroelectric antiferroelectric HfZrO<sub>2</sub> |
| title | Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf<sub>1−x</sub>Zr<sub>x</sub>O<sub>2</sub> Diodes |
| title_full | Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf<sub>1−x</sub>Zr<sub>x</sub>O<sub>2</sub> Diodes |
| title_fullStr | Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf<sub>1−x</sub>Zr<sub>x</sub>O<sub>2</sub> Diodes |
| title_full_unstemmed | Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf<sub>1−x</sub>Zr<sub>x</sub>O<sub>2</sub> Diodes |
| title_short | Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf<sub>1−x</sub>Zr<sub>x</sub>O<sub>2</sub> Diodes |
| title_sort | unipolar parity of ferroelectric antiferroelectric characterized by junction current in crystalline phase hf sub 1 x sub zr sub x sub o sub 2 sub diodes |
| topic | ferroelectric antiferroelectric HfZrO<sub>2</sub> |
| url | https://www.mdpi.com/2079-4991/11/10/2685 |
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