A Novel Bidirectional AlGaN/GaN ESD Protection Diode

A Novel Bidirectional AlGaN/GaN ESD Protection Diode

Despite the superior working properties, GaN-based HEMTs and systems are still confronted with the threat of a transient ESD event, especially for the vulnerable gate structure of the p-GaN or MOS HEMTs. Therefore, there is still an urgent need for a bidirectional ESD protection diode to improve the...

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Bibliographic Details
Main Authors: Bin Yao, Yijun Shi, Hongyue Wang, Xinbin Xu, Yiqiang Chen, Zhiyuan He, Qingzhong Xiao, Lei Wang, Guoguang Lu, Hao Li, Yun Huang, Bo Zhang
Format: Article
Language:English
Published: MDPI AG 2022-01-01
Series:Micromachines
Subjects:
electrostatic discharge
ESD protection diode
GaN HEMT
transmission line pulsing
Online Access:https://www.mdpi.com/2072-666X/13/1/135

Internet

https://www.mdpi.com/2072-666X/13/1/135

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