A Novel Bidirectional AlGaN/GaN ESD Protection Diode
Despite the superior working properties, GaN-based HEMTs and systems are still confronted with the threat of a transient ESD event, especially for the vulnerable gate structure of the p-GaN or MOS HEMTs. Therefore, there is still an urgent need for a bidirectional ESD protection diode to improve the...
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-01-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/13/1/135 |
| _version_ | 1797491847724007424 |
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| author | Bin Yao Yijun Shi Hongyue Wang Xinbin Xu Yiqiang Chen Zhiyuan He Qingzhong Xiao Lei Wang Guoguang Lu Hao Li Yun Huang Bo Zhang |
| author_facet | Bin Yao Yijun Shi Hongyue Wang Xinbin Xu Yiqiang Chen Zhiyuan He Qingzhong Xiao Lei Wang Guoguang Lu Hao Li Yun Huang Bo Zhang |
| author_sort | Bin Yao |
| collection | DOAJ |
| description | Despite the superior working properties, GaN-based HEMTs and systems are still confronted with the threat of a transient ESD event, especially for the vulnerable gate structure of the p-GaN or MOS HEMTs. Therefore, there is still an urgent need for a bidirectional ESD protection diode to improve the ESD robustness of a GaN power system. In this study, an AlGaN/GaN ESD protection diode with bidirectional clamp capability was proposed and investigated. Through the combination of two floating gate electrodes and two pF-grade capacitors connected in parallel between anode or cathode electrodes and the adjacent floating gate electrodes (<i>C</i><sub>GA</sub> (<i>C</i><sub>GC</sub>)), the proposed diode could be triggered by a required voltage and possesses a high secondary breakdown current (<i>I</i><sub>S</sub>) in both forward and reverse transient ESD events. Based on the experimental verification, it was found that the bidirectional triggering voltages (<i>V</i><sub>trig</sub>) and <i>I</i><sub>S</sub> of the proposed diode were strongly related to <i>C</i><sub>GA</sub> (<i>C</i><sub>GC</sub>). With <i>C</i><sub>GA</sub> (<i>C</i><sub>GC</sub>) increasing from 5 pF to 25 pF, <i>V</i><sub>trig</sub> and <i>I</i><sub>S</sub> decreased from ~18 V to ~7 V and from ~7 A to ~3 A, respectively. The diode’s high performance demonstrated a good reference for the ESD design of a GaN power system. |
| first_indexed | 2024-03-10T00:55:09Z |
| format | Article |
| id | doaj.art-ccfb8abb75e14eaaa33f6396f9faff44 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T00:55:09Z |
| publishDate | 2022-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-ccfb8abb75e14eaaa33f6396f9faff442023-11-23T14:45:31ZengMDPI AGMicromachines2072-666X2022-01-0113113510.3390/mi13010135A Novel Bidirectional AlGaN/GaN ESD Protection DiodeBin Yao0Yijun Shi1Hongyue Wang2Xinbin Xu3Yiqiang Chen4Zhiyuan He5Qingzhong Xiao6Lei Wang7Guoguang Lu8Hao Li9Yun Huang10Bo Zhang11School of Electrical and Information Engineering, Hunan University, Changsha 410082, ChinaThe Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic, Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, ChinaThe Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic, Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, ChinaThe Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic, Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, ChinaThe Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic, Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, ChinaThe Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic, Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, ChinaThe Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic, Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, ChinaThe Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic, Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, ChinaThe Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic, Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, ChinaSchool of Electrical and Information Engineering, Hunan University, Changsha 410082, ChinaThe Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic, Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, ChinaThe Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic, Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, ChinaDespite the superior working properties, GaN-based HEMTs and systems are still confronted with the threat of a transient ESD event, especially for the vulnerable gate structure of the p-GaN or MOS HEMTs. Therefore, there is still an urgent need for a bidirectional ESD protection diode to improve the ESD robustness of a GaN power system. In this study, an AlGaN/GaN ESD protection diode with bidirectional clamp capability was proposed and investigated. Through the combination of two floating gate electrodes and two pF-grade capacitors connected in parallel between anode or cathode electrodes and the adjacent floating gate electrodes (<i>C</i><sub>GA</sub> (<i>C</i><sub>GC</sub>)), the proposed diode could be triggered by a required voltage and possesses a high secondary breakdown current (<i>I</i><sub>S</sub>) in both forward and reverse transient ESD events. Based on the experimental verification, it was found that the bidirectional triggering voltages (<i>V</i><sub>trig</sub>) and <i>I</i><sub>S</sub> of the proposed diode were strongly related to <i>C</i><sub>GA</sub> (<i>C</i><sub>GC</sub>). With <i>C</i><sub>GA</sub> (<i>C</i><sub>GC</sub>) increasing from 5 pF to 25 pF, <i>V</i><sub>trig</sub> and <i>I</i><sub>S</sub> decreased from ~18 V to ~7 V and from ~7 A to ~3 A, respectively. The diode’s high performance demonstrated a good reference for the ESD design of a GaN power system.https://www.mdpi.com/2072-666X/13/1/135electrostatic dischargeESD protection diodeGaN HEMTtransmission line pulsing |
| spellingShingle | Bin Yao Yijun Shi Hongyue Wang Xinbin Xu Yiqiang Chen Zhiyuan He Qingzhong Xiao Lei Wang Guoguang Lu Hao Li Yun Huang Bo Zhang A Novel Bidirectional AlGaN/GaN ESD Protection Diode Micromachines electrostatic discharge ESD protection diode GaN HEMT transmission line pulsing |
| title | A Novel Bidirectional AlGaN/GaN ESD Protection Diode |
| title_full | A Novel Bidirectional AlGaN/GaN ESD Protection Diode |
| title_fullStr | A Novel Bidirectional AlGaN/GaN ESD Protection Diode |
| title_full_unstemmed | A Novel Bidirectional AlGaN/GaN ESD Protection Diode |
| title_short | A Novel Bidirectional AlGaN/GaN ESD Protection Diode |
| title_sort | novel bidirectional algan gan esd protection diode |
| topic | electrostatic discharge ESD protection diode GaN HEMT transmission line pulsing |
| url | https://www.mdpi.com/2072-666X/13/1/135 |
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