Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs

Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs

In this paper, a P-type GaN buried layer is introduced into the buffer layer of AlGaN/GaN HEMTs, and the effect of the P-type GaN buried layer on the device’s temperature characteristics is studied using Silvaco TCAD software. The results show that, compared to the conventional device structure, the...

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Bibliographic Details
Main Authors: Hanghang Lv, Yanrong Cao, Maodan Ma, Zhiheng Wang, Xinxiang Zhang, Chuan Chen, Linshan Wu, Ling Lv, Xuefeng Zheng, Yongkun Wang, Wenchao Tian, Xiaohua Ma
Format: Article
Language:English
Published: MDPI AG 2023-07-01
Series:Micromachines
Subjects:
AlGaN/GaN HEMTs
self-heating effect
channel temperature
channel electric field
Online Access:https://www.mdpi.com/2072-666X/14/7/1457

Internet

https://www.mdpi.com/2072-666X/14/7/1457

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