Effects of Al Composition and High-Temperature Atomic Layer-Deposited Al<sub>2</sub>O<sub>3</sub> Layer on the Leakage Current Characteristics of AlGaN/GaN Schottky Barrier Diodes

Effects of Al Composition and High-Temperature Atomic Layer-Deposited Al<sub>2</sub>O<sub>3</sub> Layer on the Leakage Current Characteristics of AlGaN/GaN Schottky Barrier Diodes

AlGaN/GaN Schottky barrier diodes (SBDs) with high Al composition and high temperature atomic layer deposition (ALD) Al<sub>2</sub>O<sub>3</sub> layers were investigated. Current–voltage (I–V), X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM), and capacit...

Full description

Bibliographic Details
Main Authors: Jae-Hoon Lee, Jung-Hee Lee, Ki-Sik Im
Format: Article
Language:English
Published: MDPI AG 2021-01-01
Series:Crystals
Subjects:
AlGaN/GaN
Schottky barrier diodes (SBDs)
atomic layer deposition (ALD)
Al<sub>2</sub>O<sub>3</sub>
leakage current
Online Access:https://www.mdpi.com/2073-4352/11/2/87

Internet

https://www.mdpi.com/2073-4352/11/2/87

Similar Items