Surface Potential Visualization in Organic Antiambipolar Transistors Using Operando Kelvin Probe Force Microscopy for Understanding the Comprehensive Carrier Transport Mechanism

Surface Potential Visualization in Organic Antiambipolar Transistors Using Operando Kelvin Probe Force Microscopy for Understanding the Comprehensive Carrier Transport Mechanism

Abstract An antiambipolar transistor (AAT) exhibits a negative differential transconductance (NDT) due to a partially overlapped p–n junction formed in the transistor channel. However, the NDT origin remains unclear. In this study, the operando Kelvin probe force microscopy is employed to unveil thi...

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Bibliographic Details
Main Authors: Ryoma Hayakawa, Soichiro Takeiri, Yoichi Yamada, Yutaka Wakayama
Format: Article
Language:English
Published: Wiley-VCH 2023-07-01
Series:Advanced Materials Interfaces
Subjects:
carrier transport mechanism
Kelvin probe force microscopy
negative differential transconductance
operando observation
organic antiambipolar transistors
Online Access:https://doi.org/10.1002/admi.202201857

Internet

https://doi.org/10.1002/admi.202201857

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