Deep-potential enabled multiscale simulation of gallium nitride devices on boron arsenide cooling substrates
Abstract High-efficient heat dissipation plays critical role for high-power-density electronics. Experimental synthesis of ultrahigh thermal conductivity boron arsenide (BAs, 1300 W m−1K−1) cooling substrates into the wide-bandgap semiconductor of gallium nitride (GaN) devices has been realized. How...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2024-03-01
|
| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-024-46806-7 |