Improved Ultraviolet Detection and Device Performance of Al<sub>2</sub>O<sub>3</sub>-Dielectric In<sub>0.17</sub>Al<sub>0.83</sub>N/AlN/GaN MOS-HFETs

Improved Ultraviolet Detection and Device Performance of Al<sub>2</sub>O<sub>3</sub>-Dielectric In<sub>0.17</sub>Al<sub>0.83</sub>N/AlN/GaN MOS-HFETs

Ultraviolet (UV) detection and electrical characteristics of In<sub>0.17</sub>Al<sub>0.83</sub>N/AlN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with Al<sub>2</sub>O<sub>3</sub> gate-dielectric and passivation for...

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Bibliographic Details
Main Authors: Ching-Sung Lee, Xue-Cheng Yao, Yi-Ping Huang, Wei-Chou Hsu
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
MOS-HFET
InAlN/AlN/GaN
Al₂O₃
ultrasonic spray pyrolysis deposition
UV detection
spectral responsivity
Online Access:https://ieeexplore.ieee.org/document/8671702/

Internet

https://ieeexplore.ieee.org/document/8671702/

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