Reducing optical and resistive losses in graded silicon-germanium buffer layers for silicon based tandem cells using step-cell design
Si solar cells with a SiGe graded buffer on top are fabricated as the initial step in GaAsP/Si tandem cell fabrication. Using this structure, the impact of the SiGe buffer layer on the Si solar cells is characterized. To mitigate the impact of the narrow-bandgap SiGe on the electrical and optical ch...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-05-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4921945 |