Reducing optical and resistive losses in graded silicon-germanium buffer layers for silicon based tandem cells using step-cell design
Si solar cells with a SiGe graded buffer on top are fabricated as the initial step in GaAsP/Si tandem cell fabrication. Using this structure, the impact of the SiGe buffer layer on the Si solar cells is characterized. To mitigate the impact of the narrow-bandgap SiGe on the electrical and optical ch...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2015-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4921945 |
| _version_ | 1828170699749982208 |
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| author | Evelina Polyzoeva Sabina Abdul Hadi Ammar Nayfeh Judy L. Hoyt |
| author_facet | Evelina Polyzoeva Sabina Abdul Hadi Ammar Nayfeh Judy L. Hoyt |
| author_sort | Evelina Polyzoeva |
| collection | DOAJ |
| description | Si solar cells with a SiGe graded buffer on top are fabricated as the initial step in GaAsP/Si tandem cell fabrication. Using this structure, the impact of the SiGe buffer layer on the Si solar cells is characterized. To mitigate the impact of the narrow-bandgap SiGe on the electrical and optical characteristics of the Si sub-cell, a portion of the underlying Si is exposed using a step-cell design. The step-cell design is demonstrated to increase the Jsc of the SiGe/Si stack from 5 to 20 mA/cm2. The layout of the top mesa is shown to have an impact on the device characteristics with the finger design giving better results than the rectangular mesa with respect to fill factor and series resistance. In addition, utilizing the step-cell design increases overall spectral response of the bottom cell, with significant improvements in the short wavelength range. |
| first_indexed | 2024-04-12T03:14:38Z |
| format | Article |
| id | doaj.art-cd438379017e4c0c863149d129baaa72 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-04-12T03:14:38Z |
| publishDate | 2015-05-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-cd438379017e4c0c863149d129baaa722022-12-22T03:50:14ZengAIP Publishing LLCAIP Advances2158-32262015-05-0155057161057161-710.1063/1.4921945061505ADVReducing optical and resistive losses in graded silicon-germanium buffer layers for silicon based tandem cells using step-cell designEvelina Polyzoeva0Sabina Abdul Hadi1Ammar Nayfeh2Judy L. Hoyt3Microsystems Technology Laboratories, MIT, Cambridge, MA 02139, USACenter for Future Energy Systems (iFES), Department of Electrical Engineering and Computer Science (EECS), Masdar Institute of Science and Technology, P.O. Box 54224, Abu Dhabi, UAECenter for Future Energy Systems (iFES), Department of Electrical Engineering and Computer Science (EECS), Masdar Institute of Science and Technology, P.O. Box 54224, Abu Dhabi, UAEMicrosystems Technology Laboratories, MIT, Cambridge, MA 02139, USASi solar cells with a SiGe graded buffer on top are fabricated as the initial step in GaAsP/Si tandem cell fabrication. Using this structure, the impact of the SiGe buffer layer on the Si solar cells is characterized. To mitigate the impact of the narrow-bandgap SiGe on the electrical and optical characteristics of the Si sub-cell, a portion of the underlying Si is exposed using a step-cell design. The step-cell design is demonstrated to increase the Jsc of the SiGe/Si stack from 5 to 20 mA/cm2. The layout of the top mesa is shown to have an impact on the device characteristics with the finger design giving better results than the rectangular mesa with respect to fill factor and series resistance. In addition, utilizing the step-cell design increases overall spectral response of the bottom cell, with significant improvements in the short wavelength range.http://dx.doi.org/10.1063/1.4921945 |
| spellingShingle | Evelina Polyzoeva Sabina Abdul Hadi Ammar Nayfeh Judy L. Hoyt Reducing optical and resistive losses in graded silicon-germanium buffer layers for silicon based tandem cells using step-cell design AIP Advances |
| title | Reducing optical and resistive losses in graded silicon-germanium buffer layers for silicon based tandem cells using step-cell design |
| title_full | Reducing optical and resistive losses in graded silicon-germanium buffer layers for silicon based tandem cells using step-cell design |
| title_fullStr | Reducing optical and resistive losses in graded silicon-germanium buffer layers for silicon based tandem cells using step-cell design |
| title_full_unstemmed | Reducing optical and resistive losses in graded silicon-germanium buffer layers for silicon based tandem cells using step-cell design |
| title_short | Reducing optical and resistive losses in graded silicon-germanium buffer layers for silicon based tandem cells using step-cell design |
| title_sort | reducing optical and resistive losses in graded silicon germanium buffer layers for silicon based tandem cells using step cell design |
| url | http://dx.doi.org/10.1063/1.4921945 |
| work_keys_str_mv | AT evelinapolyzoeva reducingopticalandresistivelossesingradedsilicongermaniumbufferlayersforsiliconbasedtandemcellsusingstepcelldesign AT sabinaabdulhadi reducingopticalandresistivelossesingradedsilicongermaniumbufferlayersforsiliconbasedtandemcellsusingstepcelldesign AT ammarnayfeh reducingopticalandresistivelossesingradedsilicongermaniumbufferlayersforsiliconbasedtandemcellsusingstepcelldesign AT judylhoyt reducingopticalandresistivelossesingradedsilicongermaniumbufferlayersforsiliconbasedtandemcellsusingstepcelldesign |