Ferroelectricity of HfZrO<sub>2</sub> in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors

Ferroelectricity of HfZrO<sub>2</sub> in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors

The corresponding energy landscape and surface potential are deduced from the experimental ferroelectricity of HfZrO<sub>2</sub> (HZO) for low-power steep-slope transistor applications. The anti-ferroelectric (AFE) in annealed 600&#x00B0;C HZO extracted electrostatic potential gain f...

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Bibliographic Details
Main Authors: Min Hung Lee, Y.-T. Wei, C. Liu, J.-J. Huang, Ming Tang, Yu-Lun Chueh, K.-Y. Chu, Miin-Jang Chen, Heng-Yuan Lee, Yu-Sheng Chen, Li-Heng Lee, Ming-Jinn Tsai
Format: Article
Language:English
Published: IEEE 2015-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
ferroelectric
subthreshold swing
negative capacitance
Online Access:https://ieeexplore.ieee.org/document/7110513/

Internet

https://ieeexplore.ieee.org/document/7110513/

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