Design and Investigation of InGaAs/InP/InAlAs MOSFET With Optimized Switching Efficiency
In this research, the DC performance of four InGaAs MOSFETs having different technology of 22nm, 14nm, 10nm, and 7nm with highly doped source and drain region is successfully examined. A high-performance MOSFET is designed as a large current of 12mA/<inline-formula> <tex-math notation="...
| Autori principali: | , , , , |
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| Natura: | Articolo |
| Lingua: | English |
| Pubblicazione: |
IEEE
2024-01-01
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| Serie: | IEEE Access |
| Soggetti: | |
| Accesso online: | https://ieeexplore.ieee.org/document/10531709/ |