Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates

Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates

We investigate in detail the role of strain relaxation and capping overgrowth in the self-assembly of InAs quantum dots by droplet epitaxy. InAs quantum dots were realized on an In<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><se...

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Bibliographic Details
Main Authors: Artur Tuktamyshev, Stefano Vichi, Federico Guido Cesura, Alexey Fedorov, Giuseppe Carminati, Davide Lambardi, Jacopo Pedrini, Elisa Vitiello, Fabio Pezzoli, Sergio Bietti, Stefano Sanguinetti
Format: Article
Language:English
Published: MDPI AG 2022-10-01
Series:Nanomaterials
Subjects:
droplet epitaxy
quantum dot
metamorphic buffer layer
strain relaxation
III–V semiconductors
Online Access:https://www.mdpi.com/2079-4991/12/20/3571

Internet

https://www.mdpi.com/2079-4991/12/20/3571

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