Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells
The lateral bipolar electric transport has been investigated for multi-period n-In 0.08 Ga 0.92 As/GaAs heterostructures with tunnel-coupled double-quantum wells for various carrier mobilities at temperatures 4.2...160 K. The presence of two types of charge carriers – electrons and holes – is identi...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
2018-10-01
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| Series: | Semiconductor Physics, Quantum Electronics & Optoelectronics |
| Subjects: | |
| Online Access: | http://journal-spqeo.org.ua/n3_2018/P256-262abstr.html |