Changes in impurity radiative recombination and surface morphology induced by treatment of GaP in weak magnetic field
In this work, the results of studying the long-term changes in the intensity of photoluminescence bands and surface morphology of gallium phosphide caused by treatment in weak magnetic fields have been presented. A non-thermal mechanism based on the idea of defects transformation due to the random e...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
2020-09-01
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| Series: | Semiconductor Physics, Quantum Electronics & Optoelectronics |
| Subjects: | |
| Online Access: | http://journal-spqeo.org.ua/n3_2020/P302-307abstr.html |