Changes in impurity radiative recombination and surface morphology induced by treatment of GaP in weak magnetic field
In this work, the results of studying the long-term changes in the intensity of photoluminescence bands and surface morphology of gallium phosphide caused by treatment in weak magnetic fields have been presented. A non-thermal mechanism based on the idea of defects transformation due to the random e...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
2020-09-01
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| Series: | Semiconductor Physics, Quantum Electronics & Optoelectronics |
| Subjects: | |
| Online Access: | http://journal-spqeo.org.ua/n3_2020/P302-307abstr.html |
| _version_ | 1811258497780678656 |
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| author | R.A. Redko G.V. Milenin V.V. Milenin S.M. Redko |
| author_facet | R.A. Redko G.V. Milenin V.V. Milenin S.M. Redko |
| author_sort | R.A. Redko |
| collection | DOAJ |
| description | In this work, the results of studying the long-term changes in the intensity of photoluminescence bands and surface morphology of gallium phosphide caused by treatment in weak magnetic fields have been presented. A non-thermal mechanism based on the idea of defects transformation due to the random events related with defect subsystem modification has been proposed. The radiation power of electromagnetic waves emitted by electrons in the studied semiconductor has been estimated. Fitted parameters for the long-term transformation intensity of photoluminescence and diffusion factor for appearing defects have been calculated. |
| first_indexed | 2024-04-12T18:15:18Z |
| format | Article |
| id | doaj.art-cdd574dbbe784326a12215ad1a2cd8b6 |
| institution | Directory Open Access Journal |
| issn | 1560-8034 1605-6582 |
| language | English |
| last_indexed | 2024-04-12T18:15:18Z |
| publishDate | 2020-09-01 |
| publisher | National Academy of Sciences of Ukraine. Institute of Semi conductor physics. |
| record_format | Article |
| series | Semiconductor Physics, Quantum Electronics & Optoelectronics |
| spelling | doaj.art-cdd574dbbe784326a12215ad1a2cd8b62022-12-22T03:21:40ZengNational Academy of Sciences of Ukraine. Institute of Semi conductor physics.Semiconductor Physics, Quantum Electronics & Optoelectronics1560-80341605-65822020-09-0123330230710.15407/spqeo23.03.302Changes in impurity radiative recombination and surface morphology induced by treatment of GaP in weak magnetic fieldR.A. Redko0G.V. Milenin1V.V. Milenin2S.M. Redko3V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45, prospect Nauky, 03680 Kyiv, UkraineV. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45, prospect Nauky, 03680 Kyiv, UkraineV. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45, prospect Nauky, 03680 Kyiv, UkraineV. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45, prospect Nauky, 03680 Kyiv, UkraineIn this work, the results of studying the long-term changes in the intensity of photoluminescence bands and surface morphology of gallium phosphide caused by treatment in weak magnetic fields have been presented. A non-thermal mechanism based on the idea of defects transformation due to the random events related with defect subsystem modification has been proposed. The radiation power of electromagnetic waves emitted by electrons in the studied semiconductor has been estimated. Fitted parameters for the long-term transformation intensity of photoluminescence and diffusion factor for appearing defects have been calculated.http://journal-spqeo.org.ua/n3_2020/P302-307abstr.htmlphotoluminescencedislocationrandom eventresonanceion-plasma frequencyweak magnetic fieldmicrowave radiation |
| spellingShingle | R.A. Redko G.V. Milenin V.V. Milenin S.M. Redko Changes in impurity radiative recombination and surface morphology induced by treatment of GaP in weak magnetic field Semiconductor Physics, Quantum Electronics & Optoelectronics photoluminescence dislocation random event resonance ion-plasma frequency weak magnetic field microwave radiation |
| title | Changes in impurity radiative recombination and surface morphology induced by treatment of GaP in weak magnetic field |
| title_full | Changes in impurity radiative recombination and surface morphology induced by treatment of GaP in weak magnetic field |
| title_fullStr | Changes in impurity radiative recombination and surface morphology induced by treatment of GaP in weak magnetic field |
| title_full_unstemmed | Changes in impurity radiative recombination and surface morphology induced by treatment of GaP in weak magnetic field |
| title_short | Changes in impurity radiative recombination and surface morphology induced by treatment of GaP in weak magnetic field |
| title_sort | changes in impurity radiative recombination and surface morphology induced by treatment of gap in weak magnetic field |
| topic | photoluminescence dislocation random event resonance ion-plasma frequency weak magnetic field microwave radiation |
| url | http://journal-spqeo.org.ua/n3_2020/P302-307abstr.html |
| work_keys_str_mv | AT raredko changesinimpurityradiativerecombinationandsurfacemorphologyinducedbytreatmentofgapinweakmagneticfield AT gvmilenin changesinimpurityradiativerecombinationandsurfacemorphologyinducedbytreatmentofgapinweakmagneticfield AT vvmilenin changesinimpurityradiativerecombinationandsurfacemorphologyinducedbytreatmentofgapinweakmagneticfield AT smredko changesinimpurityradiativerecombinationandsurfacemorphologyinducedbytreatmentofgapinweakmagneticfield |