TCAD Evaluation of the Active Substrate Bias Effect on the Charge Transport of Ω-Gate Nanowire MOS Transistors With Ultra-Thin BOX

TCAD Evaluation of the Active Substrate Bias Effect on the Charge Transport of Ω-Gate Nanowire MOS Transistors With Ultra-Thin BOX

This work presents an analysis of the application of active substrate bias (or back bias) on the charge transport properties of n-type <inline-formula> <tex-math notation="LaTeX">$\boldsymbol{\Omega }$ </tex-math></inline-formula>-gate SOI nanowire MOS transistors w...

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Bibliographic Details
Main Authors: F. E. Bergamaschi, M. A. Pavanello
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Mobility
nanowire MOS transistors
substrate bias
thin BOX
Online Access:https://ieeexplore.ieee.org/document/9684572/

Internet

https://ieeexplore.ieee.org/document/9684572/

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