Improving hole injection from p-EBL down to the end of active region by simply playing with polarization effect for AlGaN based DUV light-emitting diodes
In this work, we simply take advantage of the polarization effect to efficiently improve the hole injection from the p-type electron blocking layer (p-EBL) to the end of the active region for AlGaN based deep ultraviolet light emitting diodes (DUV LEDs). By properly increasing the AlN composition of...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0007460 |