| Summary: | In this work, we simply take advantage of the polarization effect to efficiently improve the hole injection from the p-type electron blocking layer (p-EBL) to the end of the active region for AlGaN based deep ultraviolet light emitting diodes (DUV LEDs). By properly increasing the AlN composition of AlGaN quantum barriers, a smaller positive polarized charge density at the last quantum barrier/p-EBL interface can be obtained, which correspondingly leads to the suppressed hole depletion and the reduced hole blocking effect in the p-EBL. Meanwhile, we properly increase the quantum well thickness so that the polarized electric field can even more accelerate the holes, and this will homogenize the hole distribution more across the MQWs. Therefore, the external quantum efficiency for DUV LEDs can be enhanced.
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