Large ferroelectric polarization and high dielectric constant in HfO2-based thin films via Hf0.5Zr0.5O2/ZrO2 nanobilayer engineering

HfO2-based ferroelectric films have been extensively explored and utilized in the field of non-volatile memory and electrical programmability. However, the trade-off between ferroelectric polarization and dielectric constant in HfO2 has limited the overall performance improvement of devices in pract...

Full description

Bibliographic Details
Main Authors: Lei Liu, Chengfeng Jiang, Xi Yuan, Yan Zhang, Haiyan Chen, Dou Zhang
Format: Article
Language:English
Published: Elsevier 2025-05-01
Series:Journal of Materiomics
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2352847824001618