On short channel effects in high voltage JFETs: A theoretical analysis
In this work, the impact of Short Channel Effects (SCEs), particularly Drain Induced Barrier Lowering (DIBL) on the performance of a high voltage Silicon Carbide (SiC) JFET has been thoroughly investigated. Drift-Diffusion simulations of on-state current-voltage characteristics and breakdown perform...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2024-04-01
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| Series: | Power Electronic Devices and Components |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2772370424000026 |