On short channel effects in high voltage JFETs: A theoretical analysis

On short channel effects in high voltage JFETs: A theoretical analysis

In this work, the impact of Short Channel Effects (SCEs), particularly Drain Induced Barrier Lowering (DIBL) on the performance of a high voltage Silicon Carbide (SiC) JFET has been thoroughly investigated. Drift-Diffusion simulations of on-state current-voltage characteristics and breakdown perform...

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Bibliografiske detaljer
Main Authors: F. Monaghan, A. Martinez, J. Evans, C. Fisher, M. Jennings
Format: Article
Sprog:English
Udgivet: Elsevier 2024-04-01
Serier:Power Electronic Devices and Components
Fag:
Silicon carbide
JFET
Drain induced barrier lowering
Short channel effects
Breakdown voltage
Model
Online adgang:http://www.sciencedirect.com/science/article/pii/S2772370424000026

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http://www.sciencedirect.com/science/article/pii/S2772370424000026

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