Improved Electrical Characteristics of Field Effect Transistors with GeSeTe-Based Ovonic Threshold Switching Devices

Improved Electrical Characteristics of Field Effect Transistors with GeSeTe-Based Ovonic Threshold Switching Devices

Hyper-field effect transistors (hyper-FETs) are crucial in the development of low-power logic devices. With the increasing significance of power consumption and energy efficiency, conventional logic devices can no longer achieve the required performance and low-power operation. Next-generation logic...

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Bibliographic Details
Main Authors: Su Yeon Lee, Hyun Kyu Seo, Se Yeon Jeong, Min Kyu Yang
Format: Article
Language:English
Published: MDPI AG 2023-06-01
Series:Materials
Subjects:
threshold switching
MOSFET
hyper-FET
sub-threshold slope
ovonic threshold switch
steep slope
Online Access:https://www.mdpi.com/1996-1944/16/12/4315

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https://www.mdpi.com/1996-1944/16/12/4315

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