Investigation Into Active Gate-Driving Timing Resolution and Complexity Requirements for a 1200 V 400 A Silicon Carbide Half Bridge Module

Investigation Into Active Gate-Driving Timing Resolution and Complexity Requirements for a 1200 V 400 A Silicon Carbide Half Bridge Module

Silicon Carbide MOSFETs have lower switching losses when compared to similarly rated Silicon IGBT, but exhibit faster switching edges, larger overshoots and increased oscillatory switching behaviour, resulting in greater electro-magnetic interference (EMI) generation. Active Gate Drivers (AGD) can h...

Full description

Bibliographic Details
Main Authors: Mason Parker, Ilker Sahin, Ross Mathieson, Stephen Finney, Paul D. Judge
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Open Journal of Power Electronics
Subjects:
Active gate driving
AGD
Silicon Carbide
SiC
EMI reduction
timing resolution
Online Access:https://ieeexplore.ieee.org/document/10054505/

Internet

https://ieeexplore.ieee.org/document/10054505/

Similar Items