Fluorine-Terminated Polycrystalline Diamond Solution-Gate Field-Effect Transistor Sensor with Smaller Amount of Unexpectedly Generated Fluorocarbon Film Fabricated by Fluorine Gas Treatment

In this study, a partially fluorine-terminated solution-gate field-effect transistor sensor with a smaller amount of unexpectedly generated fluorohydrocarbon film on a polycrystalline diamond channel is described. A conventional method utilizing inductively coupled plasma with fluorocarbon gas leads...

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Bibliographic Details
Main Authors: Yukihiro Shintani, Hiroshi Kawarada
Format: Article
Language:English
Published: MDPI AG 2022-04-01
Series:Materials
Subjects:
Online Access:https://www.mdpi.com/1996-1944/15/9/2966