Multi-photon multi-quantum transitions in the spin-3/2 silicon-vacancy centers of SiC

Silicon vacancy centers in silicon carbide are promising candidates for storing and manipulating quantum information. Implementation of fast quantum gates is an essential requirement for quantum information processing. In a low magnetic field, the resonance frequencies of silicon vacancy spins are i...

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Bibliographic Details
Main Authors: Harpreet Singh, Mario Alex Hollberg, Andrey N. Anisimov, Pavel G. Baranov, Dieter Suter
Format: Article
Language:English
Published: American Physical Society 2022-04-01
Series:Physical Review Research
Online Access:http://doi.org/10.1103/PhysRevResearch.4.023022