Design and Fabrication of a Ka Band RF MEMS Switch with High Capacitance Ratio and Low Actuation Voltage

Design and Fabrication of a Ka Band RF MEMS Switch with High Capacitance Ratio and Low Actuation Voltage

In this paper a high capacitance ratio and low actuation voltage RF MEMS switch is designed and fabricated for Ka band RF front-ends application. The metal-insulator-metal (MIM) capacitors is employed on a signal line to improve the capacitance ratio, which will not degrade the switch reliability. T...

Full description

Bibliographic Details
Main Authors: Kun Deng, Fuxing Yang, Yucheng Wang, Chengqi Lai, Ke Han
Format: Article
Language:English
Published: MDPI AG 2021-12-01
Series:Micromachines
Subjects:
RF MEMS switch
low voltage
capacitance radio
MIM capacitors
Online Access:https://www.mdpi.com/2072-666X/13/1/37

Internet

https://www.mdpi.com/2072-666X/13/1/37

Similar Items