Parasitic Capacitance Analysis of Three-Independent-Gate Field-Effect Transistors

Parasitic Capacitance Analysis of Three-Independent-Gate Field-Effect Transistors

<italic>Three-Independent-Gate Field-Effect Transistors</italic> (TIGFETs) are a promising alternative technology that aims to replace or complement CMOS at advanced technology nodes. In this paper, we extracted the parasitic and intrinsic capacitances of a silicon-nanowire TIGFET device...

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Bibliographic Details
Main Authors: Patsy Cadareanu, Jorge Romero-Gonzalez, Pierre-Emmanuel Gaillardon
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Gate all-around
parasitic capacitance
silicon nanowire FET
Schwarz-Christoffel transformation
three-independent-gate field-effect transistor
Online Access:https://ieeexplore.ieee.org/document/9393456/

Internet

https://ieeexplore.ieee.org/document/9393456/

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