Effect of GaN Cap Thickness on the DC Performance of AlGaN/GaN HEMTs
We prepared AlGaN/GaN high electron mobility transistors (HEMTs) with GaN cap thicknesses of 0, 1, 3, and 5 nm and compared the material characteristics and device performances. It was found that the surface morphology of the epitaxial layer was effectively improved after the introduction of the GaN...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-04-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/15/5/571 |